Development of Laser Produced Plasma Source for Extreme Ultraviolet Lithography

Mitigation of fast ions from laser-produced Sn plasma for an extreme ultraviolet lithography source

The authors present evidence of the reduction of fast ion energy from laser-produced Sn plasma by introducing a low energy prepulse. The energy of Sn ions was reduced from more than 5 keV to less than 150 eV nearly without loss of the in-band conversion from laser to 13.5 nm extreme ultraviolet EUV emission as compared with that of a single pulse. The reason may come from the interaction of the...

Three-dimensional simulation of laser-produced plasma for extreme ultraviolet lithography applications

Laser-produced plasma LPP from a tin target is being considered as the light source for the next generation of extreme ultraviolet EUV lithography. An integrated model was developed to simulate the plasma behavior and the EUV radiation output in LPP devices. The model includes plasma heat conduction and hydrodynamic processes in a two-temperature approximation, as well as detailed photon radiat...

Interaction of a CO2 Laser Pulse With Tin-Based Plasma for an Extreme Ultraviolet Lithography Source

The interaction of a CO2 laser pulse with Sn-based plasma for a 13.5-nm extreme ultraviolet (EUV) lithography source was investigated. It was noted that a CO2 laser with wavelength of 10.6 μm is more sensitive to surface impurities as compared with a Nd:YAG laser with wavelength of 1.06 μm. This reveals that a CO2 laser is more likely absorbed in a thinner layer near the target surface. Compare...

Laser plasma source for extreme ultraviolet lithography using a water droplet target

Enhancements of extreme ultraviolet emission using prepulsed Sn laser-produced plasmas for advanced lithography applications

Laser-produced plasmas (LPP) from Sn targets are seriously considered to be the light source for extreme ultraviolet (EUV) next generation lithography, and optimization of such a source will lead to improved efficiency and reduced cost of ownership of the entire lithography system. We investigated the role of reheating a prepulsed plasma and its effect on EUV conversion efficiency (CE). A 6 ns,...